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d a t a sh eet objective speci?cation file under integrated circuits, ic19 1998 aug 24 integrated circuits TZA3030 sdh/sonet stm1/oc3 optical receiver
1998 aug 24 2 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 features low equivalent input noise, typically 1 pa/ ? hz wide dynamic range, typically 0.5 m ato2ma on-chip low-pass filter. the bandwidth can be varied between 90 and 150 mhz using an external resistor. default value is 120 mhz. differential transimpedance of 1.8 m w on-chip automatic gain control (agc) positive emitter coupled logic (pecl) or current-mode logic (cml) compatible data outputs los (loss of signal) detection los threshold level can be adjusted using a single external resistor on-chip dc offset compensation single supply voltage from 3.0 to 5.5 v bias voltage for pin diode. applications digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high speed data networks wideband rf gain block. general description the TZA3030 optical receiver is a low-noise transimpedance amplifier with agc plus a limiting amplifier designed to be used in sdh/sonet fibre optic links. the TZA3030 amplifies the current generated by a photo detector (pin diode or avalanche photodiode) and converts it to a differential output voltage. ordering information type number package name description version TZA3030hl lqfp32 plastic low pro?le quad ?at package; 32 leads; body 5 5 1.4 mm sot401-1 TZA3030u - naked die in waf?e pack carriers; die dimensions 1.58 1.58 mm -
1998 aug 24 3 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 block diagram fig.1 block diagram. handbook, full pagewidth mbk857 gain control testing biasing 2 2 a1 a2 4 2, 5 17, 20 31 dref 2 k w 7 65 pf iphoto preamplifier los detection limiting amplifier dc offset compensation v cca v ccd 5 13, 16, 21 24, 25 dgnd 7 1, 3, 6, 8 9, 30, 32 agnd sub 14 12 rftest 11 v ref 10 bwc agc peak detector TZA3030 cml pecl ttl 29 losth 26 los 28 losttl 18 outcml 19 outqcml 15 outsel 22 outpecl 23 outqpecl 27 losq pecl 1 nf
1998 aug 24 4 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 pinning symbol pin type description agnd 1 ground analog ground v cca 2 supply analog supply voltage agnd 3 ground analog ground dref 4 analog output bias voltage for pin diode (v cca ); cathode should be connected to this pin v cca 5 supply analog supply voltage agnd 6 ground analog ground iphoto 7 analog input current input; connect the anode of pin diode to this pin; dc bias level is 1048 mv agnd 8 ground analog ground agnd 9 ground analog ground bwc 10 analog input bandwidth control pin; default bandwidth is 120 mhz; a resistor should be connected between v ref (pin 11) and bwc (pin 10) to decrease bandwidth, or between bwc (pin 10) and agnd to increase bandwidth v ref 11 analog output band gap reference voltage; nominal value approximately 1.2 v sub 12 substrate substrate pin; to be connected to agnd dgnd 13 ground digital ground rftest 14 analog input test pin; not connected; not used in application outsel 15 cmos input output select pin; when outsel is high, cml data outputs are active and pecl data outputs are disabled; outsel is pulled low if left unconnected, pecl data outputs will then be active and cml data outputs disabled dgnd 16 ground digital ground v ccd 17 supply digital supply voltage outcml 18 cml output cml data output; outcml goes high when current ?ows into iphoto (pin 7) outqcml 19 cml output cml compliment of outcml (pin 18) v ccd 20 supply digital supply voltage dgnd 21 ground digital ground outpecl 22 pecl output pecl data output; outpecl goes high when current ?ows into iphoto (pin 7) outqpecl 23 pecl output pecl compliment of outpecl (pin 22) dgnd 24 ground digital ground dgnd 25 ground digital ground los 26 pecl output pecl-compatible los detection pin; los output is high when the input signal is below the user programmable threshold level losq 27 pecl output pecl compliment of los (pin 26) losttl 28 ttl output cmos-compatible los detection pin; the losttl output is high when the input signal is below the user programmable threshold level losth 29 analog i/o pin for setting input threshold level; nominal dc voltage is v cca - 1.5 v; threshold level set by connecting an external resistor between losth and v cca or by forcing a current into losth; default value for this resistor is 400 k w agnd 30 ground analog ground agc 31 analog i/o agc monitor voltage; the internal agc circuit can be disabled by applying an external voltage to this pin agnd 32 ground analog ground
1998 aug 24 5 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 fig.2 pin configuration. handbook, full pagewidth TZA3030hl mbk856 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 agnd v cca agnd dref v cca agnd iphoto agnd dgnd los losq losttl losth agnd agc agnd v ccd outcml v ccd dgnd outpecl dgnd outqpecl outqcml agnd bwc v ref sub rftest outsel dgnd dgnd
1998 aug 24 6 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 chip dimensions and bonding pad locations symbol pad coordinates (1) xy agnd 1 102 1251 v cca 2 102 1111 agnd 3 102 971 dref 4 102 814 v cca 5 102 674 agnd 6 102 534 iphoto 7 102 395 agnd 8 102 254 agnd 9 243 105 bwc 10 383 105 v ref 11 523 105 sub 12 663 105 dgnd 13 803 105 rftest 14 943 105 outsel 15 1100 105 dgnd 16 1257 105 v ccd 17 1398 263 outcml 18 1398 403 note 1. all coordinates ( m m) are measured with respect to the bottom left-hand corner of the die. outqcml 19 1398 543 v ccd 20 1398 683 dgnd 21 1398 823 outpecl 22 1398 963 outqpecl 23 1398 1103 dgnd 24 1398 1243 dgnd 25 1283 1400 los 26 1143 1400 losq 27 986 1400 losttl 28 829 1400 losth 29 671 1400 agnd 30 514 1400 agc 31 357 1400 agnd 32 217 1400 symbol pad coordinates (1) xy fig.3 bonding pad locations of TZA3030u. handbook, full pagewidth agnd 1 dgnd 24 outqpecl 23 outpecl 22 dgnd 21 v ccd 20 outqcml 19 outcml 18 v ccd 17 agnd 3 dref 4 v cca 5 agnd 6 iphoto 7 agnd 8 v cca 2 TZA3030u 9 agnd 32 agnd 31 agc 30 agnd 29 losth 28 losttl 27 losq 26 los 25 dgnd 10 bwc 11 v ref 12 sub 13 dgnd 14 rftest 15 outsel 16 dgnd mbk858 y 1.58 mm x 0 0 1.58 mm
1998 aug 24 7 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 functional description the TZA3030 contains five functional blocks: preamplifier input stage low-pass filter limiting amplifier stage offset compensation loop loss of signal detection unit. preampli?er the preamplifier provides low-noise amplification of the current generated by a photodiode connected to pin iphoto. a differential amplifier converts the output of the preamplifier to a differential voltage. an agc loop increases the dynamic range of the receiver by reducing the feedback resistance of the preamplifier. the agc loop hold capacitor is integrated on-chip, so an external capacitor is not needed for agc. the agc voltage can be monitored at pin agc. this pin can be left unconnected for normal operation. it can also be used to force an external agc voltage. if pin agc is connected to v cca , the internal agc loop is disabled and the receiver gain is at a maximum. in this case, the maximum input current is approximately 10 m a. low-pass ?lter a low-pass filter controls the bandwidth of the receiver, which can be varied between 90 and 150 mhz. the bandwidth is set to 120 mhz by default. it can be decreased by connecting a resistor between pin bwc and pin v ref or increased by connecting a resistor between pin bwc and agnd. limiting ampli?er a limiting amplifier boosts the signal up to pecl levels. the output can be either cml or pecl compatible, selected by means of pin outsel. when outsel is high, the cml data outputs are active and the pecl data outputs are disabled. if outsel is left unconnected, it is pulled low and the pecl data outputs are active while the cml data outputs are disabled. the logic level symbol definitions for cml and pecl are shown in fig.4. the cml and pecl output circuits are given in fig.5. offset compensation loop a control loop connected between the limiting amplifier output and the differential amplifier input cancels the dc offset. the loop bandwidth is fixed internally at 30 khz. loss of signal (los) detection the los section detects an input signal level below a fixed threshold. the threshold is determined by the current through pin losth. if this current is increased, the threshold level will rise. an external resistor connected between pin losth and v cca can be used, or a current can be forced into pin losth. the default value for the external resistor is 400 k w . in this case, the current through pin losth will be approximately 3.75 m a since the voltage at pin losth is regulated at 1.5 v below the supply voltage. this threshold corresponds to an input current of 208 na. the ratio of losth current to input current is thus approximately 18 : 1. when the input signal level falls below this threshold, the los (pecl compatible) and losttl (ttl compatible) outputs go high. the hysteresis is fixed internally at 3 db. response time is typically less than 20 m s.
1998 aug 24 8 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 fig.4 logic level symbol definitions for cml and pecl. handbook, full pagewidth mgr243 v oo v o(max) v oqh v oh v oql v ol v o(min) v o(p-p) v cc fig.5 output circuits. handbook, full pagewidth mgk886 100 w 100 w v cc outcml outqcml 105 w 105 w v cc outqpecl outpecl 0.5 ma 9 ma 6 ma 0.5 ma a. cml. b. pecl.
1998 aug 24 9 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics symbol parameter min. max. unit v cc supply voltage - 0.5 +6 v v n dc voltage pin 7: iphoto - 0.5 +2 v pin 14: rftest - 0.5 v cc + 0.5 v pins 22, 23, 26 and 27: outpecl, outqpecl, los and losq v cc - 2v cc + 0.5 v pins 18 and 19: outcml and outqcml v cc - 2v cc + 0.5 v pin 29: losth - 0.5 v cc + 0.5 v pin 10: bwc - 0.5 +3.2 v pin 31: agc - 0.5 v cc + 0.5 v pin 11: v ref - 0.5 +3.2 v pin 4: dref - 0.5 v cc + 0.5 v pin 15: outsel - 0.5 v cc + 0.5 v pin 28: losttl - 0.5 v cc + 0.5 v i n dc current pin 7: iphoto - 2.5 +2.5 ma pin 14: rftest - 2+2ma pins 22, 23, 26 and 27: outpecl, outqpecl, los and losq - 25 +10 ma pins 18 and 19: outcml and outqcml - 15 +15 ma pin 29: losth - 2+2ma pin 10: bwc - 1+1ma pin 31: agc - 0.2 +0.2 ma pin 11: v ref - 2 +2.5 ma pin 4: dref - 2.5 +2.5 ma pin 15: outsel - 0.5 +0.5 ma pin 28: losttl - 16 +16 ma p tot total power dissipation - 600 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 40 +85 c symbol parameter value unit r th(j-s) thermal resistance from junction to solder point tbf k/w r th(j-a) thermal resistance from junction to ambient tbf k/w
1998 aug 24 10 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 characteristics for typical values t amb =25 c and v cc = 5 v; minimum and maximum values are valid over the entire ambient temperature range and process spread. symbol parameter conditions min. typ. max. unit v cc supply voltage 3 5 5.5 v i ccd digital supply current note 1 13 20 28 ma note 2 - 47 - ma note 3 11 17 24 ma i cca analog supply current 24 36 51 ma p tot total power dissipation -- 525 mw t j junction temperature - 40 - +110 c t amb operating ambient temperature - 40 +25 +85 c r tr small-signal transresistance of the receiver measured differentially pecl outputs - 2000 - k w cml outputs - 1000 - k w f - 3db(h) high frequency - 3 db point pin bwc left unconnected; note 4 - 120 - mhz f - 3db(l) low frequency - 3 db point 20 30 40 khz i n(tot) total integrated rms noise current over bandwidth referenced to input; c i = 1.2 pf; note 5 d f = 90 mhz - 16 - na d f = 120 mhz - tbf - na d f = 155 mhz - tbf - na psrr power supply rejection ratio measured differentially; note 6 f = 100 khz to 10 mhz - 0.5 m a/v f = 10 mhz to 100 mhz - 10 m a/v d r tr / d t agc loop constant - 1 - db/ms input: iphoto v bias(iphoto) input bias voltage tbf 1048 tbf mv i i(iphoto)(p-p) input current (peak-to-peak value) v cc =5v - 2000 +1 +2000 m a v cc = 3.3 v - 1000 +1 +1000 m a pecl outputs: outpecl and outqpecl v oh high-level output voltage 50 w to v cc - 2v v cc - 1100 - v cc - 900 mv v ol low-level output voltage 50 w to v cc - 2v v cc - 1840 - v cc - 1620 mv v oo output offset voltage measured differentially - 10 - +10 mv t r rise time 20% to 80% - tbf tbf ps t f fall time 80% to 20% - tbf tbf ps
1998 aug 24 11 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 notes 1. outpecl, outqpecl, outcml, outqcml, los and losq outputs are left unconnected. outpecl and outqpecl outputs are active. 2. outpecl and outqpecl outputs are terminated with 50 w to v t . v t is an external termination voltage for pecl outputs and is 2 v below the supply voltage. outcml, outqcml, los and losq outputs are left unconnected. 3. outcml and outqcml outputs are terminated with 50 w to v ccd ; cml outputs are active. outpecl, outqpecl, los and losq outputs are left unconnected. 4. the bandwidth is set to 120 mhz by default. it can be varied between 90 and 150 mhz by adjusting the voltage at pin bwc. 5. all i n(tot) measurements were made with an input capacitance of c i = 1.2 pf. this was comprised of 0.7 pf for the photodiode itself, with 0.3 pf allowed for the pcb layout and 0.2 pf intrinsic to the package. 6. psrr is defined as the ratio of the equivalent current change at the input ( d i iphoto ) to a change in supply voltage: for example ,a4mv disturbance on v cc at 10 mhz will typically generate the equivalent of 2 na extra photodiode current. pecl outputs: los and losq v oh high-level output voltage 50 w to v cc - 2v v cc - 1100 - v cc - 900 mv v ol low-level output voltage 50 w to v cc - 2v v cc - 1840 - v cc - 1620 mv v oo output offset voltage measured differentially - 10 - +10 mv t r rise time 20% to 80% -- 600 ns t f fall time 80% to 20% -- 200 ns cml outputs: outcml and outqcml v o output voltage measured single-ended; 50 w to v cc v cc - 260 - v cc mv v o(se)(p-p) output voltage single-ended (peak-to-peak value) 50 w to v cc 150 200 260 mv v oo output offset voltage measured differentially; 50 w to v cc - 10 - +10 mv r o output resistance measured single-ended 80 100 120 w t r rise time 20% to 80%; r l =50 w ;c l =1pf - tbf - ps t f fall time 80% to 20%; r l =50 w ;c l =1pf - tbf - ps cmos input: outsel v il low-level input voltage - 0.4 0.8 v v ih high-level input voltage v cc - 1v cc - 0.5 - v cmos output: losttl v ol low-level output voltage 0 - 0.2 v v oh high-level output voltage v cc - 0.2 - v cc v symbol parameter conditions min. typ. max. unit psrr d i iphoto d v cc -------------------- =
1998 aug 24 12 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 application information fig.6 application diagram: pecl data outputs active. handbook, full pagewidth 1, 3, 6, 8 9, 30, 32 mbk859 4 17, 20 29 2, 5 v cca losth dref 7 iphoto agnd sub 31 12 agc 10 bwc 14 rftest 7 2 13, 16, 21 24, 25 dgnd 5 15 outsel 11 v ref TZA3030 27 losq 28 losttl 23 outqpecl 22 outpecl 19 outqcml 18 outcml 26 los r1 r1 r2 r2 z o = 50 w z o = 50 w 400 k w 22 nf 1 nf v ccd 2 22 nf 680 nf 10 m h 10 m h v cc fig.7 application diagram: cml data outputs active. handbook, full pagewidth 1, 3, 6, 8 9, 30, 32 mbk860 4 17, 20 29 2, 5 v cca losth dref 7 iphoto agnd sub 31 12 agc 10 bwc 14 rftest 7 2 13, 16, 21 24, 25 dgnd 5 15 outsel 11 v ref TZA3030 27 losq 28 losttl 23 outqpecl 22 outpecl 19 outqcml 18 outcml 26 los r1 r1 z o = 50 w z o = 50 w 400 k w 22 nf v ccd 2 22 nf 680 nf 10 m h 10 m h 1 nf v cc
1998 aug 24 13 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 pecl outputs: outpecl, outqpecl, los and losq pecl outputs can be terminated in different ways depending on the power supply voltage (see fig.8). fig.8 pecl termination schemes. handbook, full pagewidth v oq v o v iq v i r1 = 127 w r2 = 82.5 w r1 = 127 w r2 = 82.5 w gnd v cc = 3.3 v v oq v o v iq v i r1 = 83.3 w r2 = 125 w r1 = 83.3 w r2 = 125 w gnd v cc = 5 v mgk887
1998 aug 24 14 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 cml outputs: outcml and outqcml the output impedance of the cml output driver is 100 w (see fig.9) which doesnt match the characteristic impedance of the strip line. while this means that the reflections of some incident edges will arrive at the driver output on the pcb, this value was selected to reduce power dissipation inside the ic. the parallel combination of 100 w and 50 w (33 w ) will generate a signal swing of 200 mv (peak-to-peak value, single-sided) with a tail current of 6 ma. if the output impedance was 50 w rather than 100 w , an 8 ma tail current would be needed to generate the same voltage swing. this would increase power dissipation by 33%. if necessary, the output impedance of the generator can be matched to the line impedance by connecting an external 100 w resistor in parallel with the output as shown in fig.10. the magnitude of the output voltage swing will not change due to adaptive regulation. however, power dissipation will increase by 33%. fig.9 cml interface circuit without matched impedance; low power dissipation. handbook, full pagewidth mbk861 v oq v o v iq v i 100 w 100 w 50 w 50 w v cc v cc z o = 50 w z o = 50 w generator inside TZA3030 interconnect pcb receiver inside tza3004 fig.10 cml interface circuit with matched impedance; high power dissipation. handbook, full pagewidth mbk862 v oq v o v iq v i 100 w 100 w 100 w 100 w 50 w 50 w v cc v cc z o = 50 w z o = 50 w generator inside TZA3030 interconnect pcb receiver inside tza3004
1998 aug 24 15 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 package outline 0.2 unit a max. a 1 a 2 a 3 b p ce (1) eh e ll p z y w v q references outline version european projection issue date iec jedec eiaj mm 1.60 0.15 0.05 1.5 1.3 0.25 0.27 0.17 0.18 0.12 5.1 4.9 0.5 7.15 6.85 1.0 0.95 0.55 7 0 o o 0.12 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.75 0.45 sot401-1 95-12-19 97-08-04 d (1) (1) (1) 5.1 4.9 h d 7.15 6.85 e z 0.95 0.55 d b p e e b 8 d h b p e h v m b d z d a z e e v m a x 1 32 25 24 17 16 9 q a 1 a l p detail x l (a ) 3 a 2 y w m w m 0 2.5 5 mm scale lqfp32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm sot401-1 c pin 1 index
1998 aug 24 16 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all lqfp packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 50 and 300 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. wave soldering wave soldering is not recommended for lqfp packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. caution wave soldering is not applicable for all lqfp packages with a pitch (e) equal or less than 0.5 mm. if wave soldering cannot be avoided, for lqfp packages with a pitch (e) larger than 0.5 mm, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1998 aug 24 17 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1998 aug 24 18 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 notes
1998 aug 24 19 philips semiconductors objective speci?cation sdh/sonet stm1/oc3 optical receiver TZA3030 notes
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+41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 160 1010, fax. +43 160 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 printed in the netherlands 425102/200/01/pp20 date of release: 1998 aug 24 document order number: 9397 750 04069

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